J. S. Hwang, S. L. Tyan, W. Y. Chou, M. L. Lee, D. Weybume, Z. Hang, H. H.
Lin, and T. L. Lee, ''Photoreflectance study of surface Fermi level
in molecular beam epitaxial grown InAlAs heterostructures, '' Appl. Phys.
Lett., Vol. 64, pp. 3314-3316, (1994).
H. H. Tsai, Y. K. Su, H. H. Lin, R. L. Wang, and T. L. Lee, ''P-N
double quantum well resonant interband tunneling diode with peak-to-valley
current ratio of 144 at room temperature, '' IEEE Electron Device Lett.,
Vol. EDL-15, pp. 357-359, (1994).
C. H. Huang, T. L. Lee and H. H. Lin, ''Relation between the
collector current and the two-dimensional electron gas stored in the
base-collector heterojunction notch of InAlAs / InGaAs / InAlGaAs DHBT's, ''
Solid State Electronics, V0l.38, pp. 1765-1770, (1995).
T. L. Lee, J. S. Liu, and H. H. Lin, ''The incorporation behavior
of As and P in GaInAsP on InP grown by gas source molecular beam epitaxy, ''
J. Cryst. Growth 155, 16 (1995).
J. S. Hwang, W. Y. Chou, S. L. Tyan, H. H. Lin, and T. L. Lee,
"Study of surface Fermi level and surface state distribution in InAlAs
surface-intrinsic-n+ structure by photoreflectance" Appl. Phys. Lett.
Vol. 67, pp. 2350-2352, (1995).
T. L. Lee, W. D. Chu, and H. H. Lin, ''Growth and characterization
of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by
molecular beam epitaxy, '' Solid State Electronics, Vol. 39, pp. 1127-1132,
(1996),.
T. L. Lee, J. S. Liu, and H. H. Lin, ''Incorporation of group V
elements in Ga(x)In(1-x)As(y)P(1-y) grown by gas source molecular beam
epitaxy, '' J. Electronic Materials, Vol. 25, pp. 1469-1473, (1996).
J. S. Liu, T. L. Lee, and H. H. Lin, "GSMBE growth model for
Ga(x)In(1-x)As(y)P(1-y) on GaAs,"Optical and Quantum Electronics, Vol.
28, pp. 1269, (1996).
Tsuen-Lin Lee, Yeong-Fu Lou and Fei-Jing Tseng, ”The Incorporation Behavior
of Nitrogen in Gas-Source MBE Grown InNxP1-x”, Journal of Informatics & Electronics,
Vol.3, No.2, pp.5-10, March (2009).
Yeong-Fu Lou, Fei-Jing Tseng and Tsuen-Lin Lee, “Service Quality and User
Satisfaction Measurement of the Campus Website”, Journal of Informatics & Electronics,
Vol.3, No.2, pp.19-29, March (2009).
Conference paper
T. L. Lee, and H. H. Lin, ''Preparation and properties of
lattice-matched InAlAs and InAlGaAs epilayers on (100) InP, '' Proceedings
of 1992 International Electron Devices and Materials Symposium, pp. 286-289,
Taipei, ROC, 1992.
C. H. Huang, T. L. Lee, and H. H. Lin, ''DC characteristics of
In(0.52)Al(0.48)As / In(0.53)Ga(0.47)As /In(0.53)(Al(x)Ga(1-x))(0.47)As
double heterojunction bipolar transistors, '' Fifth international conference
on InP and related material, Paris, France, 1993.
C. H. Lin, T. L. Lee, C. H. Huang, and H. H. Lin, ''On the High
Frequency Properties of InGaAs Bipolar Transistors, '' 19th EDMS,
pp.307-310, ChungLi, ROC, 1993.
T. L. Lee, W. D. Chu, and H. H. Lin, ''AlGaAs/GaAs heterojunction
bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy,''
19th EDMS, pp.311-314, ChungLi, ROC, 1993.
T. F. Yang, C. H. Tu, T. L. Lee, H. H. Lin, and Y. K. Tu, ''On the
fabrication of In0.52Al0.48As/In0.53Ga0.47As monolithic photoreceiver,''
19th EDMS, pp.348-351, ChungLi, ROC, 1993.
J. S. Liu, T. L. Lee, H. H. Lin, and C. W. Wu, ''Deep level
analysis of MBE grown InAlAs strained layers, '' 19th EDMS, pp.368-371,
ChungLi, ROC, 1993.
C. H. Huang, T. L. Lee, and H. H. Lin, ''Effects of conduction band
discontinuity and two dimentional electron gas on the DC characteristics of
InAlAs/InGaAs and InAlAs/InAlGaAs DHBT's , '' Proceedings of 1994
International Electron Devices and Materials Symposium, pp. 7-2-5 to 7-2-8,
Hsinchu, ROC, 1994.
T. L. Lee, J. S. Liu, and H. H. Lin, ''Gas source MBE growth of InP
under In-rich conditions, '' Proceedings of 1994 International Electron
Devices and Materials Symposium, pp. 11-11-39 to 11-11-42, Hsinchu, ROC,
1994.
T. L. Lee, J. S. Liu, and H. H. Lin, ''The incorporation behavior
of As and P in GaInAsP on InP grown by gas source molecular beam epitaxy, ''
Seventh international conference on InP and related material, Sapporo,
Japan, May, 1995.
M. C. Chen, T. L. Lee, G. J. Jan, and H. H. Lin, ''Strain-induced
electric fields on (111)B-oriented InGaAs/GaAs PIN diodes, '' 21th EDMS,
pp.94-97, Kaohsiung, ROC, 1995.
J. S. Liu, T. L. Lee, T. S. Sun, and H. H. Lin, ''Study on the
Be-related deep photoluminescence band in InP:Be grown by gas-source
molecular beam epitaxy , '' 21th EDMS, pp.103-108, Kaohsiung, ROC, 1995.
J. S. Juang, J. S. Liu, T. L. Lee, L. Wang, and H. H. Lin,
''Fabrication of strain-compensated InGaAsP/InP multiple-quantum-well Fabry
Perot laser, '' Proceedings of the First Radio Science Symposium,
pp.315-318, Kaohsiung, ROC, 1995.
J. S. Liu, T. L. Lee,and H. H. Lin, ''An Unified GSMBE Growth Model
for InGaAsP on InP and GaAs, '' Eighth international conference on InP and
related material, Schwabisch Gmund, Germany, April, pp.533, 1996.
國內研討會
李村林,曾有德，陳昱成，王君琪，林詩蓉，張卉伶，葉姍珊, "資訊類丙級技能檢定線上學習系統之建置",
第五屆網際網路應用與發展學術研討會,pp. 230-235,台南, May, 2004.
